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SMG2300
Elektronische Bauelemente 6A, 20V,RDS(ON) 28m[ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
A
SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80
Description
* The SMG2300 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. * The SMG2300 is universally used for all commercial-industrial surface mount applications.
S
2
L
3 Top View
B
1
B C D
D G C J K
Drain Gate Source
G H J K L S
D
Features
* Low on-resistance * Capable of 2.5V gate drive * Small package outline
H
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a
Ratings 20 8 6 4.8 20 1.25 0.01 -55 ~ +150 Value 100
Unit V V A A A W W/ : : Unit : /W
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SMG2300
Elektronische Bauelemente 6A, 20V,RDS(ON) 28m[ N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. 20 0.5 -
Typ. 0.1 10 3.6 2 8 6 19 7 550 120 80
Max. 1.0 100 1 25 28 38 -
Unit V V/ : V nA uA uA m
Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VGS= 8V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A ID=6A VDS=10V VGS=4.5V VDD=10V ID=1A VGS=4.5V RG=0.2 VGS=0V VDS=15V f=1.0MHz
Gate Threshold Voltage Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge
2
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage2 Symbol VSD Min. Typ. 0.7 Max. 1.3 Unit V Test Conditions IS=1.25A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SMG2300
Elektronische Bauelemente 6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
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Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
SMG2300
Elektronische Bauelemente 6A, 20V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Transfer Characteristics
Fig 10. Single Pulse Power
Fig 11. Normalized Thermal Transient Impedance, Junction to Ambient
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4

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